Solar Inverter Bridge Switch And Diode

After MOSFET full-bridge filtering, the output bridge generates a 50Hz sinusoidal voltage and current signal. A common implementation is a standard full-bridge structure (Figure 2). If the switches in the upper left and lower right are on, a positive voltage is loaded between the left and right terminals; The upper right and lower left switches are on, and a negative voltage is loaded between the left and right terminals. For this application, only one switch is on at any given time. One switch can be switched to PWM high frequency and the other switch to 50Hz low frequency. Since the bootstrap circuit depends on the conversion of the low-end device, the low-end device is switched to the PWM high frequency, while the high-end device is switched to the 50Hz low frequency. This application uses a 600V power switch, so the 600V overjunction MOSFET is ideal for this high-speed switching device. Because these switching devices are subject to the full reverse recovery current of other devices when switched on, fast recovery overjunction devices such as the 600V FCH47N60F are ideal. With an RDS(ON) of 73 milliohm, it has a low on-off loss compared to other comparable fast recovery devices. When this device is converted at 50Hz, there is no need to use the fast recovery feature. These devices have excellent dv/dt and di/dt characteristics and improve system reliability compared to standard hyperjunction MOSFETs.